Semiconductor light emitting element

ABSTRACT

A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2014-168803, filed on Aug. 21, 2014; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor lightemitting element.

BACKGROUND

It is desirable to increase the efficiency of semiconductor lightemitting elements such as light emitting diodes (LEDs), etc.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a first embodiment;

FIG. 2 is a schematic perspective plan view showing the semiconductorlight emitting element according to the first embodiment;

FIG. 3 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a reference example;

FIG. 4 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a second embodiment;

FIG. 5A to FIG. 5E are schematic cross-sectional views in order of theprocesses, showing a method for manufacturing the semiconductor lightemitting element according to the embodiment; and

FIG. 6 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a variation of the first embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor light emitting elementincludes a base body, a first semiconductor layer of a firstconductivity type, a second semiconductor layer of a second conductivitytype, a first light emitting layer, a first conductive layer, a thirdsemiconductor layer of the first conductivity type, a fourthsemiconductor layer of the second conductivity type, a second lightemitting layer, a second conductive layer, a first member, and a secondmember. The first semiconductor layer is separated from the base body ina first direction, the first semiconductor layer includes a first regionand a second region, the second region being arranged with the firstregion in a direction intersecting the first direction. The secondsemiconductor layer is provided between the base body and the firstregion. The first light emitting layer is provided between the firstregion and the second semiconductor layer. The first conductive layer isprovided between the base body and the second region and electricallyconnected to the second region. The third semiconductor layer isseparated from the base body in the first direction. The thirdsemiconductor layer includes a third region and a fourth region, thefourth region being arranged with the third region in a directionintersecting the first direction. The fourth semiconductor layer isprovided between the base body and the third region. The second lightemitting layer is provided between the third region and the fourthsemiconductor layer. The second conductive layer is provided between thebase body and the fourth semiconductor layer and electrically connectedto the fourth semiconductor layer. The first member includes a first endportion and a second end portion. The first end portion is positionedbetween the base body and the first conductive layer and electricallyconnected to the first conductive layer, the second end portion notoverlapping the second conductive layer. The second member includes athird end portion and a fourth end portion. The third end portion ispositioned between the base body and the second conductive layer andelectrically connected to the second conductive layer. The fourth endportion is electrically connected to the second end portion.

Various embodiments of the invention will be described hereinafter withreference to the accompanying drawings.

The drawings are schematic or conceptual; and the relationships betweenthe thicknesses and widths of portions, the proportions of sizes betweenportions, etc., are not necessarily the same as the actual valuesthereof. Further, the dimensions and/or the proportions may beillustrated differently between the drawings, even in the case where thesame portion is illustrated.

In the drawings and the specification of the application, componentssimilar to those described in regard to a drawing thereinabove aremarked with like reference numerals, and a detailed description isomitted as appropriate.

First Embodiment

FIG. 1 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a first embodiment.

FIG. 2 is a schematic perspective plan view showing the semiconductorlight emitting element according to the first embodiment.

Some of the components shown in the cross-sectional view of FIG. 1 arenot shown in the perspective plan view of FIG. 2 for easier viewing ofthe drawing.

As shown in FIG. 1, the semiconductor light emitting element 110according to the embodiment includes a base body 50, a firstsemiconductor layer 10 a, a second semiconductor layer 20 a, a firstlight emitting layer 30 a, a third semiconductor layer 10 b, a fourthsemiconductor layer 20 b, a second light emitting layer 30 b, a firstconductive layer e1, a second conductive layer e2, a first inter-elementinterconnect (a first member) 11, and a second inter-elementinterconnect (a second member) 12.

As shown in FIG. 2, the semiconductor light emitting element 110includes, for example, first to ninth stacked bodies 100 a to 100 i asnine stacked bodies. The example of FIG. 1 shows the cross section ofthe interconnect structure between the first stacked body 100 a and thesecond stacked body 100 b. The interconnect structures between the otherstacked bodies are similar.

The first stacked body 100 a includes a first semiconductor layer 10 a,a second semiconductor layer 20 a, and a first light emitting layer 30a. The second stacked body 100 b includes a third semiconductor layer 10b, a fourth semiconductor layer 20 b, and a second light emitting layer30 b. A separation trench 90 is provided between the first stacked body100 a and the second stacked body 100 b.

The first semiconductor layer 10 a is separated from the base body 50 inthe first direction. The first direction is, for example, a Z-axisdirection. The first semiconductor layer 10 a includes a first region r1and a second region r2. The second region r2 is arranged with the firstregion r1 in a direction (e.g., an X-axis direction) intersecting theZ-axis direction. The first semiconductor layer 10 a has a firstconductivity type.

The second semiconductor layer 20 a is provided between the base body 50and the first region r1. The second semiconductor layer 20 a has asecond conductivity type. For example, the first conductivity type is ann-type. The second conductivity type is a p-type. The first conductivitytype may be the p-type; and the second conductivity type may be then-type. Hereinbelow, the case is described where the first conductivitytype is the n-type and the second conductivity type is the p-type.

The first light emitting layer 30 a is provided between the first regionr1 and the second semiconductor layer 20 a.

The first conductive layer e1 is provided between the base body 50 andthe second region r2. The first conductive layer e1 is electricallyconnected to the second region r2. The first conductive layer e1 is, forexample, an n-side electrode.

The third semiconductor layer 10 b is separated from the base body 50 inthe Z-axis direction. The third semiconductor layer 10 b includes athird region r3 and a fourth region r4. The fourth region r4 is arrangedwith the third region r3 in the X-axis direction. The thirdsemiconductor layer 10 b has the first conductivity type.

The fourth semiconductor layer 20 b is provided between the base body 50and the third region r3. The fourth semiconductor layer 20 b has thesecond conductivity type.

The second light emitting layer 30 b is provided between the thirdregion r3 and the fourth semiconductor layer 20 b.

Each of the semiconductor layers recited above includes, for example, anitride semiconductor.

The second conductive layer e2 is provided between the base body 50 andthe fourth semiconductor layer 20 b. The second conductive layer e2 iselectrically connected to the fourth semiconductor layer 20 b. Thesecond conductive layer e2 is, for example, a p-side electrode.

The first inter-element interconnect 11 includes a first end portion ed1and a second end portion ed2. The first end portion ed1 is positionedbetween the base body 50 and the first conductive layer e1. The firstend portion ed1 is electrically connected to the first conductive layere1. The second end portion ed2 does not overlap the second conductivelayer e2.

The second inter-element interconnect 12 includes a third end portioned3 and a fourth end portion ed4. The third end portion ed3 ispositioned between the base body 50 and the second conductive layer e2.The third end portion ed3 is electrically connected to the secondconductive layer e2. The fourth end portion ed4 is electricallyconnected to the second end portion ed2. For example, the secondinter-element interconnect 12 may be formed as one body with aprotective metal layer (also called a barrier metal) by extending theprotective metal layer.

In the specification of the application, the “state of beingelectrically connected” includes the state in which multiple conductorsare in direct contact. The “state of being electrically connected”includes the state in which a current flows between multiple conductorsthat have another conductor disposed between the multiple conductors.

An insulating layer 60 is further provided in the semiconductor lightemitting element 110. The insulating layer is provided between the basebody 50 and the first inter-element interconnect 11 and between the basebody 50 and the second inter-element interconnect 12.

A metal layer 40 is further provided in the semiconductor light emittingelement 110. The metal layer 40 is provided between the base body 50 andthe insulating layer 60.

According to the embodiment as shown in FIG. 1, the first inter-elementinterconnect 11 on the n-side includes the first end portion ed1 and thesecond end portion ed2; and the second end portion ed2 does not overlapthe second conductive layer e2 on the p-side. The second inter-elementinterconnect 12 on the p-side includes the third end portion ed3 and thefourth end portion ed4; and the fourth end portion ed4 is electricallyconnected to the second end portion ed2.

For example, the overlapping portion of the first inter-elementinterconnect 11 on the n-side and the second inter-element interconnect12 on the p-side does not overlap the second conductive layer e2 on thep-side. For example, the overlapping portion of the first inter-elementinterconnect 11 and the second inter-element interconnect 12 overlapsthe separation trench 90 in the Z-axis direction. The width in theX-axis direction of the overlapping portion of the first inter-elementinterconnect 11 and the second inter-element interconnect 12 is, forexample, not less than 2 μm and not more than 30 μm.

In the embodiment, because the second end portion ed2 does not overlapthe second conductive layer e2 on the p-side, the difference between theZ-axis direction position of the second end portion ed2 and the Z-axisdirection position of the third end portion ed3 can be set to be small.In other words, the difference in levels is small. The insulating layer60 is bonded to the metal layer 40. Because the difference in levels canbe small in the embodiment, the bonding surface of the insulating layer60 can be flat even in the case where the insulating layer 60 is thin.Therefore, the stress applied when bonding is reduced; and damage of theelement can be suppressed. Thereby, the productivity can be increased.If the insulating layer 60 is made thicker to reduce the difference inlevels, the heat dissipation degrades. In the embodiment, good heatdissipation is obtained because the damage of the element can besuppressed even in the case where the insulating layer 60 is set to bethin. Thereby, the efficiency can be increased.

The first inter-element interconnect 11 is electrically connected to thefirst conductive layer e1. The first inter-element interconnect 11 has afirst thickness t1. The second inter-element interconnect 12 iselectrically connected to the second conductive layer e2. The secondinter-element interconnect 12 has a second thickness t2. It is favorablefor the first thickness t1 to be thicker than the second thickness t2.That is, the second thickness t2 of the second inter-elementinterconnect 12 is set to be thinner than the first thickness t1 of thefirst inter-element interconnect 11. The first thickness t1 is, forexample, not less than 0.2 μm and not more than 3.0 μm. The secondthickness t2 is, for example, not less than 0.1 μm and not more than 2.0μm. Thereby, the increase of the thickness of the element can besuppressed more effectively.

FIG. 3 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a reference example.

In the semiconductor light emitting element 199 according to thereference example, the first inter-element interconnect 11 extends tothe second conductive layer e2 on the p-side. In other words, accordingto the reference example, the second conductive layer e2 on the p-side,a protective metal layer 70, and the first inter-element interconnect 11overlap each other. The thickness of the element in the stackingdirection partially increases due to the overlapping portion. In otherwords, an unevenness is formed in the bonding surface of the insulatinglayer 60. Therefore, stress is applied to the protrusion when theinsulating layer 60 and the base body 50 are bonded by the metal layer40; and there is a possibility that the element may be damaged. Even ifthe element is not damaged, there are cases where the stress is storedinside the element and the reliability decreases. There are cases whereleaks of the element occur due to the insulating layer 60 breaking andcausing shorts to the metal layer 40.

In the embodiment, the flatness of the bonding surface of the insulatinglayer 60 can be improved; the stress is reduced; and the damage of theelement can be suppressed. Also, the efficiency can be increased.

The semiconductor light emitting element 110 further includes aninter-element insulation layer 80. The inter-element insulation layer 80is provided between the third semiconductor layer 10 b and the secondinter-element interconnect 12 and between the second light emittinglayer 30 b and the second inter-element interconnect 12.

As shown in FIG. 2, the semiconductor light emitting element 110includes, for example, the first to ninth stacked bodies 100 a to 100 i.In the first to ninth stacked bodies 100 a to 100 i, the p-electrode ofone stacked body is connected in series to the n-electrode of one otherstacked body arranged with the one stacked body.

The fifth stacked body 100 e includes, for example, a first pad unit 13a on the n-side. The ninth stacked body 100 i includes, for example, asecond pad unit 13 b on the p-side.

For example, a voltage is applied between the first pad unit 13 a andthe second pad unit 13 b. Thereby, a current flows in the first to ninthstacked bodies 100 a to 100 i. Due to the current, light is emitted fromthe first light emitting layer 30 a and the second light emitting layer30 b. In the example, the emitted light is emitted from the firstsemiconductor layer 10 a and third semiconductor layer 10 b side.

In the description recited above, the first conductive layer e1 and thesecond conductive layer e2 include light-reflective materials. Forexample, the conductive layers include at least one of aluminum (Al),silver (Ag), nickel (Ni), gold, or rhodium. Thereby, a high lightreflectance is obtained. The first conductive layer e1 illustrated asthe n-electrode includes, for example, Al or an Al alloy. The secondconductive layer e2 illustrated as the p-electrode includes, forexample, Ag, Ni, a Ag alloy, or a stacked structure of these metals.

For example, the second conductive layer e2 is formed by performing heattreatment in an oxygen atmosphere at not less than 250° C. and not morethan 400° C. (e.g., 300° C.) for not less than 0.5 minutes and not morethan 2 minutes (e.g., 1 minute). The concentration of the oxygen in theoxygen atmosphere is, for example, 50% or more. The concentration of thenitrogen in the oxygen atmosphere is, for example, 50% or less.

After performing the heat treatment in the nitrogen atmosphere at notless than 250° C. and not more than 400° C. (e.g., 300° C.) for not lessthan 0.5 minutes and not more than 2 minutes (e.g., 1 minute), heattreatment may be performed in an oxygen atmosphere at not less than 250°C. and not more than 400° C. (e.g., 300° C.) for not less than 0.5minutes and not more than 2 minutes (e.g., 1 minute). For example, thereflectance increases; and the contact properties improve.

By applying the configuration recited above to the second conductivelayer e2, good ohmic characteristics with the fourth semiconductor layer20 b are obtained. A low contact resistance with the fourthsemiconductor layer 20 b is obtained. Good electrical characteristicsand a high light reflectance are obtained.

For example, the first conductive layer e1 is formed by performing heattreatment in a nitrogen atmosphere at not less than 300° C. and not morethan 600° C. (e.g., 400° C.) for not less than 0.5 minutes and not morethan 10 minutes (e.g., 1 minute). The concentration of the nitrogen inthe nitrogen atmosphere is, for example, 90% or more. An inert gas suchas argon, etc., may be used instead of nitrogen. The heat treatment maybe performed at reduced pressure.

By applying the configuration recited above to the first conductivelayer e1, good ohmic characteristics with the first semiconductor layer10 a are obtained. A low contact resistance with the first semiconductorlayer 10 a is obtained. Good electrical characteristics and a high lightreflectance are obtained.

The first inter-element interconnect 11 and the second inter-elementinterconnect 12 also include light-reflective materials. The material ofthe first inter-element interconnect 11 includes, for example, Al or anAl alloy. The material of the second inter-element interconnect 12includes, for example, Ag or a Ag alloy.

It is favorable for the second end portion ed2 of the firstinter-element interconnect 11 to be positioned between the base body 50and the fourth end portion ed4 of the second inter-element interconnect12. That is, more efficient reflective characteristics can be obtainedby providing the second inter-element interconnect 12, which has ahigher reflectance than the first inter-element interconnect 11, on thelight emitting surface side. The fourth end portion ed4 may bepositioned between the second end portion ed2 and the base body 50, asshown in FIG. 6.

The metal layer 40 includes, for example, tin and at least one of goldor nickel. In other words, by considering the bondability, the metallayer 40 includes a metal such as Au—Sn, Ni—Sn, etc. Thereby, goodbondability is obtained.

The light that is emitted from the light emitting layers (the firstlight emitting layer 30 a and the second light emitting layer 30 b) isreflected efficiently by the electrodes, the interconnects, etc. Thelight that is reflected is emitted to the outside efficiently from thelight emitting surface. Thereby, a high light extraction efficiency isobtained.

On the other hand, the heat that is generated by the stacked body isdissipated efficiently by the base body 50. The base body 50 includes amaterial having a high thermal conductivity and good heat dissipation.The material of the base body 50 includes, for example, aluminumnitride, silicon, germanium, copper, etc. Thereby, good heat dissipationis obtained; and an excessive increase of the temperature of the stackedbody is suppressed. Thereby, a high luminous efficiency is obtained.These materials also are applicable to the embodiments described below.

The peak wavelength of the light (the emitted light) emitted from thelight emitting layer is, for example, not less than 400 nm and not morethan 650 nm. However, in the embodiment, the peak wavelength isarbitrary.

The first semiconductor layer 10 a includes, for example, a GaN layerincluding an n-type impurity. The n-type impurity may include at leastone of Si, Ge, Te, or Sn. The first semiconductor layer 10 a includes,for example, an n-side contact layer. This is similar for the thirdsemiconductor layer 10 b as well.

The second semiconductor layer 20 a includes, for example, a GaN layerincluding a p-type impurity. The p-type impurity may include at leastone of Mg, Zn, or C. The second semiconductor layer 20 a includes, forexample, a p-side contact layer. This is similar for the fourthsemiconductor layer 20 b as well.

The first stacked body 100 a that includes the first semiconductor layer10 a, the second semiconductor layer 20 a, and the first light emittinglayer 30 a is formed by, for example, epitaxial growth. The growthsubstrate may include, for example, one of Si, sapphire, GaN, SiC, orGaAs. The plane orientation of the growth substrate is arbitrary. Thisis similar for the second stacked body 100 b as well.

The configurations of the first pad unit 13 a and the second pad unit 13b are, for example, polygons (e.g., pentagons or higher), circles,flattened circles, etc. The widths of the pad units are, for example,not less than 50 micrometers (μm) and not more than 200 μm (e.g., 130μm). For example, bonding wires are connected to the pad units. Widths(sizes) for which stable connections are possible are used.

The insulating layer 60 includes, for example, silicon oxide (SiO₂,etc.) and/or silicon nitride (Si₃N₄, etc.). For example, the insulatinglayer 60 is formed at a high temperature. Thereby, good insulativeproperties, good coverage, and good reliability are obtained for theinsulating layer 60. The insulating layer 60 may be formed at a lowtemperature. By using the insulating layer 60, good spreading of thecurrent is obtained; and the effective light emission surface area canbe enlarged. The inter-element insulation layer 80 also includes, forexample, silicon oxide (SiO₂, etc.).

In the example, the side surface of a portion of the first stacked body100 a and the side surface of a portion of the second stacked body 100 bare tilted with respect to the Z-axis direction. In other words, a mesaconfiguration is applied. The travel direction of the light can bechanged by the mesa configuration. The intensity of the light emittedfrom the light emitting layer is a maximum in a direction of about 30degrees. The light traveling at the angle at which the intensity of thelight is a maximum can be changed efficiently. The effect of the sidesurface configuration is more pronounced for this structure having themultiple stacked bodies.

According to the embodiment, a so-called multijunction structure inwhich operation at a high voltage and a low current is possible can beprovided in a semiconductor light emitting element having alateral-conduction thin film structure. In the embodiment, multiplestacked bodies are connected in series. The appropriate operatingvoltage for one stacked body is within a prescribed range. By connectingthe multiple stacked bodies in series, the voltage that is applied tothe two ends of the multiple stacked bodies connected in series isdivided between the multiple stacked bodies. Thereby, even in the casewhere the voltage that is applied to the two ends is a high voltage, thevoltage that is applied to each of the stacked bodies can be set to bewithin a desirable prescribed range. Using the voltage in the desirableprescribed range, the operation is obtained by a low current to realizehigh efficiency. In other words, operation of the multiple stackedbodies at a high voltage and a low current is obtained. Thereby, highefficiency is obtained for the multiple stacked bodies.

In one stacked body (element) according to the embodiment, for example,one n-electrode is interposed between two p-electrodes. At least twosuch stacked bodies are connected in series. Thereby, the light emissionuniformity can be increased.

According to the embodiment, high reliability can be obtained because aninter-layer insulating layer is unnecessary between the p-electrode andthe n-electrode. According to the embodiment, good heat dissipation canbe obtained.

In the example shielding components such as interconnects, etc., are notprovided at the light extraction surface. Thereby, a high lightextraction efficiency is obtained. The inter-element interconnect isprovided not at the light extraction surface but on the base body side.Thereby, a high light extraction efficiency is obtained.

Second Embodiment

FIG. 4 is a schematic cross-sectional view showing a semiconductor lightemitting element according to a second embodiment.

FIG. 4 shows another interconnect structure between the first stackedbody 100 a and the second stacked body 200 b. As shown in FIG. 4, thesemiconductor light emitting element 111 according to the embodimentincludes the first stacked body 100 a and the second stacked body 100 b.In the example, the metal layer 40 and the base body 50 are not shown.In the embodiment, the overlapping portion of the first inter-elementinterconnect 11 on the n-side and the second inter-element interconnect12 on the p-side overlaps the third semiconductor layer 10 b in theZ-axis direction. The width in the X-axis direction of the overlappingportion of the first inter-element interconnect 11 and the secondinter-element interconnect 12 is, for example, not less than 1 μm andnot more than 15 μm.

Thereby, the partial increase of the thickness of the element in thestacking direction is suppressed; and the bonding surface of theinsulating layer can be flat. Therefore, the stress applied when bondingis reduced; and the damage of the element can be prevented. Thereby, thereliability can be increased. Thereby, a highly reliable semiconductorlight emitting element can be provided. Good heat dissipation isobtained; and high efficiency is obtained.

For example, a layer 12 a including Ag may be provided on the lightemitting surface side (the inter-element insulation layer 80 side) ofthe second inter-element interconnect 12. In other words, the layer 12 aincluding Ag is provided between the second inter-element interconnect12 and the inter-element insulation layer 80. Thereby, more efficientreflective characteristics can be obtained.

FIG. 5A to FIG. 5E are schematic cross-sectional views in order of theprocesses, showing a method for manufacturing the semiconductor lightemitting element according to the embodiment.

In the example, the interconnect structure between the first stackedbody 100 a and the second stacked body 100 b is shown.

A growth substrate (not shown) is prepared; and a first semiconductorfilm 10 f, a light emitting film 30 f, and a second semiconductor film20 f are sequentially formed in this order on the growth substrate. Theformation of these films may include, for example, metal-organicchemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy(MOVPE), molecular beam epitaxy (MBE), hydride vapor phase epitaxy(HVPE), etc. These films are epitaxially grown. The growth substrateincludes, for example, a substrate of silicon, sapphire, spinel, GaAs,InP, ZnO, Ge, SiGe, SiC, etc.

As shown in FIG. 5A, the first stacked body 100 a and the second stackedbody 100 b are formed by removing a portion of the first semiconductorfilm 10 f, a portion of the light emitting film 30 f, and a portion ofthe second semiconductor film 20 f. The first stacked body 100 aincludes the first semiconductor layer 10 a, the second semiconductorlayer 20 a, and the first light emitting layer 30 a. The second stackedbody 100 b includes the third semiconductor layer 10 b, the fourthsemiconductor layer 20 b, and the second light emitting layer 30 b. Thepatterning of the removal includes, for example, RIE (Reactive IonEtching). For example, a gas including chlorine is used in the RIE. Thefirst semiconductor layer 10 a and the third semiconductor layer 10 bare continuous at this time and are separated in a process describedbelow.

An insulating film 80 f is formed on the stacked body recited above. Forexample, CVD (Chemical Vapor Deposition), sputtering, SOG (Spin OnGlass), or the like is used for the insulating film 80 f. The insulatingfilm 80 f includes, for example, silicon oxide such as SiO₂, etc.

A portion of the insulating film 80 f is removed. The second conductivelayer e2 and the second inter-element interconnect 12 on the p-side areformed in order on the fourth semiconductor layer 20 b exposed byremoving the portion of the insulating film 80 f.

As shown in FIG. 5B, the inter-element insulation layer 80 is formed byremoving the portion of the insulating film 80 f. The first conductivelayer e1 on the n-side is formed on the first semiconductor layer 10 aexposed by removing the portion of the insulating film 80 f.

As shown in FIG. 5C, the first inter-element interconnect 11 is formedon the first conductive layer e1 on the n-side. The first inter-elementinterconnect 11 may be formed simultaneously with the first conductivelayer e1.

The insulating layer 60 is formed as shown in FIG. 5D. For example, CVD,sputtering, SOG, etc., may be used for the insulating layer 60. Theinsulating layer 60 includes, for example, silicon oxide such as SiO₂,etc.

As shown in FIG. 5E, a reflective layer 61 that is made of a metal isformed on the insulating layer 60. The reflective layer 61 includes, forexample, Ag or a Ag alloy. The first semiconductor layer 10 a and thethird semiconductor layer 10 b are formed by dividing the firstsemiconductor film 10 f. Thereby, the separation trench 90 is made.Thus, the semiconductor light emitting element 110 is formed.

According to the embodiments, a highly efficient semiconductor lightemitting element can be provided.

In the specification, “nitride semiconductor” includes all compositionsof semiconductors of the chemical formula B_(x)In_(y)Al_(z)Ga_(1-x-y-z)N(0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z≦1) for which the composition ratios x,y, and z are changed within the ranges respectively. “Nitridesemiconductor” further includes group V elements other than N (nitrogen)in the chemical formula recited above, various elements added to controlvarious properties such as the conductivity type and the like, andvarious elements included unintentionally.

Hereinabove, embodiments of the invention are described with referenceto specific examples. However, the invention is not limited to thesespecific examples. For example, one skilled in the art may similarlypractice the invention by appropriately selecting specificconfigurations of components such as the base body, the semiconductorlayer, the light emitting layer, the conductive layer, the inter-elementinterconnect, etc., from known art; and such practice is within thescope of the invention to the extent that similar effects can beobtained.

Further, any two or more components of the specific examples may becombined within the extent of technical feasibility and are included inthe scope of the invention to the extent that the purport of theinvention is included.

Moreover, all semiconductor light emitting elements practicable by anappropriate design modification by one skilled in the art based on thesemiconductor light emitting elements described above as embodiments ofthe invention also are within the scope of the invention to the extentthat the spirit of the invention is included.

Various other variations and modifications can be conceived by thoseskilled in the art within the spirit of the invention, and it isunderstood that such variations and modifications are also encompassedwithin the scope of the invention.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the invention.

What is claimed is:
 1. A semiconductor light emitting element,comprising: a base body; a first semiconductor layer of a firstconductivity type separated from the base body in a first direction, thefirst semiconductor layer including a first region and a second region,the second region being arranged with the first region in a directionintersecting the first direction; a second semiconductor layer of asecond conductivity type provided between the base body and the firstregion; a first light emitting layer provided between the first regionand the second semiconductor layer; a first conductive layer providedbetween the base body and the second region, the first conductive layerbeing directly in contact with and electrically connected to the secondregion; a third semiconductor layer of the first conductivity typeseparated from the base body in the first direction, the thirdsemiconductor layer including a third region and a fourth region, thefourth region being arranged with the third region in a directionintersecting the first direction; a fourth semiconductor layer of thesecond conductivity type provided between the base body and the thirdregion; a second light emitting layer provided between the third regionand the fourth semiconductor layer; a second conductive layer providedbetween the base body and the fourth semiconductor layer andelectrically connected to the fourth semiconductor layer; a first memberincluding a first end portion and a second end portion, the first endportion being positioned between the base body and the first conductivelayer and electrically connected to the first conductive layer, thesecond end portion not overlapping the second conductive layer; and asecond member including a third end portion and a fourth end portion,the third end portion being positioned between the base body and thesecond conductive layer and electrically connected to the secondconductive layer, the fourth end portion being electrically connected tothe second end portion, wherein the second end portion is positionedbetween the fourth end portion and the base body or the fourth endportion is positioned between the second end portion and the base body.2. The element according to claim 1, wherein a thickness of the firstmember is thicker than a thickness of the second member.
 3. The elementaccording to claim 1, wherein the first member includes aluminum, andthe second member includes silver.
 4. The element according to claim 1,further comprising an insulating layer provided between the base bodyand the first member and between the base body and the second member. 5.The element according to claim 4, wherein the insulating layer includesat least one of silicon oxide or silicon nitride.
 6. The elementaccording to claim 4, further comprising a metal layer provided betweenthe base body and the insulating layer.
 7. The element according toclaim 6, wherein the metal layer includes tin and at least one of goldor nickel.
 8. The element according to claim 1, further comprising aninter-element insulation layer provided between the third semiconductorlayer and the second member and between the second light emitting layerand the second member.
 9. The element according to claim 8, wherein theinter-element insulation layer includes silicon oxide.
 10. Asemiconductor light emitting element, comprising: a base body; a firstsemiconductor layer of a first conductivity type separated from the basebody in a first direction, the first semiconductor layer including afirst region and a second region, the second region being arranged withthe first region in a direction intersecting the first direction; asecond semiconductor layer of a second conductivity type providedbetween the base body and the first region; a first light emitting layerprovided between the first region and the second semiconductor layer; afirst conductive layer provided between the base body and the secondregion, the first conductive layer being directly in contact with andelectrically connected to the second region; a third semiconductor layerof the first conductivity type separated from the base body in the firstdirection, the third semiconductor layer including a third region and afourth region, the fourth region being arranged with the third region ina direction intersecting the first direction; a fourth semiconductorlayer of the second conductivity type provided between the base body andthe third region; a second light emitting layer provided between thethird region and the fourth semiconductor layer; a second conductivelayer provided between the base body and the fourth semiconductor layerand electrically connected to the fourth semiconductor layer; a firstmember including a first end portion and a second end portion, the firstend portion being positioned between the base body and the firstconductive layer and electrically connected to the first conductivelayer, the second end portion not overlapping the second conductivelayer; and a second member including a third end portion and a fourthend portion, the third end portion being positioned between the basebody and the secondconductive layer and electrically connected to thesecond conductive layer, the fourth end portion being electricallyconnected to the second end portion, wherein a separation trench isprovided between the first semiconductor layer and the thirdsemiconductor layer in the direction intersecting the first direction,and the separation trench overlaps, in the first direction, a portionwhere the first member and the second member overlap.
 11. The elementaccording to claim 1, wherein the third semiconductor layer overlaps, inthe first direction, a portion where the first member and the secondmember overlap.
 12. The element according to claim 1, wherein the basebody includes at least one of aluminum nitride, silicon, germanium, orcopper.
 13. The element according to claim 1, wherein the firstconductive layer includes aluminum, and the second conductive layerincludes silver.
 14. A semiconductor light emitting element, comprising:a base body; a first semiconductor layer of a first conductivity typeseparated from the base body in a first direction, the firstsemiconductor layer including a first region and a second region, thesecond region being arranged with the first region in a directionintersecting the first direction; a second semiconductor layer of asecond conductivity type provided between the base body and the firstregion; a first light emitting layer provided between the first regionand the second semiconductor layer; a first conductive layer providedbetween the base body and the second region and electrically connectedto the second region, the first conductive layer not overlapping thesecond semiconductor layer in the first direction; a third semiconductorlayer of the first conductivity type separated from the base body in thefirst direction, the third semiconductor layer including a third regionand a fourth region, the fourth region being arranged with the thirdregion in a direction intersecting the first direction; a fourthsemiconductor layer of the second conductivity type provided between thebase body and the third region; a second light emitting layer providedbetween the third region and the fourth semiconductor layer; a secondconductive layer provided between the base body and the fourthsemiconductor layer and electrically connected to the fourthsemiconductor layer; a first member including a first end portion and asecond end portion, the first end portion being positioned between thebase body and the first conductive layer and electrically connected tothe first conductive layer, the second end portion not overlapping thesecond conductive layer; and a second member including a third endportion and a fourth end portion, the third end portion being positionedbetween the base body and the second conductive layer and electricallyconnected to the second conductive layer, the fourth end portion beingelectrically connected to the second end portion, wherein the second endportion is positioned between the fourth end portion and the base bodyor the fourth end portion is positioned between the second end portionand the base body.
 15. The element according to claim 14, wherein athickness of the first member is thicker than a thickness of the secondmember.
 16. The element according to claim 14, further comprising aninsulating layer provided between the base body and the first member andbetween the base body and the second member.